突出矿井瓦斯抽放限制影响因素的AHP-熵权法评价模型

为提高煤与瓦斯突出矿井瓦斯抽放效果,建立了3个一级指标、14个二级指标的突出矿井瓦斯抽放限制影响因素评价指标体系,利用AHP和熵权法分别确定指标因子主、客观权重.通过实地调研分析和反馈验证了AHP-熵权法的可行性和正确性,利用加权平均法确定评价模型的综合权重.研究表明:封孔方式、钻孔半径、抽放时间、煤体裂隙发育程度和抽放负压是目前影响煤矿瓦斯抽放效果的主控因素.     

DMF体系中Cu2O球晶的制备及形貌分析

以N,N-二甲基甲酰胺(DMF)为溶剂,通过改变铜源和表面活性剂,调控反应参数,溶剂热条件下制备了三维十字形、空心及实心的Cu₂O球晶。利用XRD、SEM等表征手段,分析探讨了工艺条件变化对Cu₂O球晶形貌的影响。研究表明,随着DMF浓度的增大,体系的还原能力增强,Cu⁺增多,溶液的过饱和度增大,Cu₂O晶体集合体形态由晶体结构控制的各向异性与对称性的球晶逐渐向各向同性球晶演变。十二烷基硫酸钠(SDS)、十六烷基三甲基溴化铵(CTAB)、聚乙烯吡咯烷酮(PVP)等表面活性剂有助于降低溶液的过饱和度,增加结晶质的表面扩散能力,有利于规则形态Cu₂O晶粒的形成。反应体系中,Cu(Ac)₂·H₂O水解生成的羧基与DMF中的甲酰基在高温下发生脱羧反应产生CO₂气体以及SDS发泡作用产生的气体是形成空心Cu₂O球晶的重要原因。     

The relation between chemical structure of dicarboxylic dihydrazide compounds and nucleation effect in isotactic polypropylene

Journal of Thermal Analysis and Calorimetry - A series of dicarboxylic dihydrazide compounds (DCDH-R-n) were prepared and used as nucleating agents for isotactic polypropylene (iPP). To investigate...     

Effects of some nucleating agents on the supercooling of erythritol to be applied as phase change material

Nine nucleating agents, calcium pimelate (CaPi), bicyclic [1, 2, 2]heptane di-carboxylate (HPN-68), a commercially obtained aryl amide nucleating agent (TMB-5), calcium salt of hexahydrophthalic acid (HPN-20E), 1,3:2,4-di-p-methylbenzylidene sorbitol (MDBS) and sodium, potassium, magnesium and calcium salt of benzene-1, 3, 5-tricarboxylic acid (Na₃BTC, K₃BTC, Mg₃BTC₂ and Ca₃BTC₂, respectively), were applied to reduce the supercooling of erythritol, and their effects were investigated by cyclic differential scanning calorimetry (DSC). The results revealed that Na₃BTC and K₃BTC could not induce erythritol to crystallize under the experiment condition. MDBS could only make erythritol to crystallize at a temperature slightly higher than that of pure erythritol, and the effect was unstable. Mg₃BTC₂, Ca₃BTC₂ and HPN-68 could induce erythritol to crystallize at relatively high temperature, but the peak temperature of crystallizing (T _{p, cr}) and the phase change enthalpy of crystallizing (Δ_cr H) decreased greatly as the melting–crystallizing cycles increased. HPN-20E-doped erythritol crystallized at a high temperature with the T _{p, cr} of 69.3 °C at the first cycle, but the T _{p, cr} and Δ_cr H varied greatly during the melting–crystallizing cycles. CaPi and TMB-5 could induce erythritol to crystallize at a stable temperature with the T _{p, cr} of about 69 °C and 64 °C, respectively, and with a stable Δ_cr H of about 204 and 185 J g^?1, respectively, in all melting–crystallizing cycles. Hence, CaPi- and TMB-5-doped erythritol could be used as PCMs and applied in thermal energy storage in which the energy was absorbed at a high temperature and released at a lower but stable temperature.     

冶炼厂烟囱降尘农田土壤重金属含量及潜在生态风险评价

摘要：为了研究冶炼厂下风向烟囱降尘对农田土壤重金属污染影响程度,以济源市某一冶炼厂工业烟囱下风向降尘覆盖农田土壤为研究对象,依次对距离该厂烟囱大约为750m-3000m的7个农田研究区（P1-P7）土壤中重金属（Hg、As、Pb、Cd、Cu、Zn、Ni、Cr、）含量进行污染状况分析,采用了单项潜在生态风险指数法和综合潜在生态风险指数法对冶炼厂下风向烟囱降尘土壤中重金属的潜在生态风险进行评价。结果表明：在3 km2研究区域范围内,距离冶炼厂越近土壤重金属含量越高,Pb、Cd为重度污染,超过了《土壤环境质量农用地土壤污染风险管控标准》（GB15618-2018）农用地土壤污染风险管制值的1.2倍,距离冶炼厂烟囱下风向P1区土壤中重金属As、Pb、Cd、Cu、Zn超过土壤环境质量农用地土壤风险筛选值,Cd 在浓度值均超过农用土壤污染风险管制值1.8倍,As元素平均浓度值超农用土壤污染风险管制值1.7倍,Pb、Cu和Zn污染较严重,Cd、Hg对综合指数（RI）贡献值较大分别为68.63和22.4。单项潜在生态风险指数评价结果显示Cd存在极严重的潜在生态风险,Pb、Cu存在较严重潜在生态风险,冶炼厂下风向土壤中综合潜在生态风险指数评价显示,冶炼厂下风向降尘土壤重金属具有较强的生态风险。     

锂离子电容器(LIC)产业前沿技术研究进展

新能源战略体系的建设和电子技术的飞速发展对储能器件的性能提出了更高的要求,锂离子电容器是将锂离子电池和双电层电容器“内部交叉”的新型混合储能器件,兼具高能量密度和高功率密度,近年来引起了国内外的广泛关注.本文阐述了锂离子电容器的工作原理和国内外产业发展现状,总结了碳负极的预赋锂技术、电极材料与体系匹配性研究等关键技术前沿的研究成果,并提出了后续产业化研究中所需要解决的实际问题.     

2,2-二甲基-1-[5-二茂铁基-3-(三氟甲基)-1H-吡唑-1-基]丙-1-酮的合成及其电化学性质

以乙酰基二茂铁为原料,经3步反应合成了一个新型的二茂铁衍生物——2,2-二甲基-1-[5-二茂铁基-3-(三氟甲基)-1H-吡唑-1-基]丙-1-酮(4),其结构经1H NMR,ESI-MS,元素分析和X-射线单晶衍射表征。4属单斜晶系,P2(1)/c空间群,晶胞参数a=7.805 6(4),b=20.906 1(11),c=11.124 6(6),β=93.820(2)°,V=1 811.33(17)3,Z=4,Dc=1.482 g·cm-3,μ=0.872 mm-1,R1=0.034 8,wR2=0.089 2。采用循环伏安法研究了4的电化学性质。结果表明:4有一对可逆的氧化还原峰,Epa=0.640 V,Epc=0.482 V,ΔE=153 m V。     

Different charging behaviors between electrons and holes in Si nanocrystals embedded in SiN_x matrix by the influence of near-interface oxide traps

Si-rich silicon nitride films are prepared by plasma-enhanced chemical vapor deposition method,followed by thermal annealing to form the Si nanocrystals(Si-NCs)embedded in Si Nx floating gate MOS structures.The capacitance–voltage(C–V),current–voltage(I–V),and admittance–voltage(G–V)measurements are used to investigate the charging characteristics.It is found that the maximum flat band voltage shift(△VFB)due to full charged holes(～6.2 V)is much larger than that due to full charged electrons(～1 V).The charging displacement current peaks of electrons and holes can be also observed by the I–V measurements,respectively.From the G–V measurements we find that the hole injection is influenced by the oxide hole traps which are located near the Si O2/Si-substrate interface.Combining the results of C–V and G–V measurements,we find that the hole charging of the Si-NCs occurs via a two-step tunneling mechanism.The evolution of G–V peak originated from oxide traps exhibits the process of hole injection into these defects and transferring to the Si-NCs.